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| 2SK3611-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation voltage Symbol VDS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg VISO Ratings 250 220 10 40 30 10 182 20 5 2.16 25 +150 -55 to +150 2 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C kVrms *1 L=3.05mH, Vcc=48V *2 Tch <150C *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = = *4 VDS < 250V *5 VGS=-30V *6 t=60sec f=60Hz = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=250V VGS=0V VDS=200V VGS=0V VGS=30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=5A VGS=10V RGS=10 VCC=125V ID=10A VGS=10V L=100H Tch=25C IF=10A VGS=0V Tch=25C IF=10A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C 10 200 10 785 88 4 12 2.7 22 7.4 21 8 5 1.10 0.155 1.05 Min. 250 3.0 Typ. Max. 5.0 25 250 100 260 1178 132 6 18 4.1 33 11.1 31.5 12 7.5 1.65 Units V V A nA m S pF 5 ns nC 10 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 5.0 58.0 Units C/W C/W www.fujielectric.co.jp/denshi/scd 1 2SK3611-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=10A 300 30 25 250 20 200 EAV [mJ] 0 25 50 75 100 125 150 PD [W] 15 150 10 100 5 50 0 0 0 25 50 75 100 125 150 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 30 20V 25 10V 8V 7.5V 7.0V 20 10 100 Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID [A] 15 6.5V 10 ID[A] 1 0.1 0 6.0V 5 VGS=5.5V 0 0 2 4 6 8 10 12 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 0.6 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C VGS= 5.5V 0.5 7.0V 6.0V 6.5V RDS(on) [ ] 10 0.4 7.5V 8V 10V 20V gfs [S] 0.3 1 0.2 0.1 0.1 0.1 0.0 1 10 100 0 5 10 15 20 25 30 ID [A] ID [A] 2 2SK3611-01MR FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 800 700 600 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A 7.0 6.5 6.0 5.5 5.0 max. RDS(on) [ m ] VGS(th) [V] max. 500 400 300 200 100 0 -50 -25 0 25 50 75 100 125 150 typ. 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=10A, Tch=25C 14 12 10 10 -1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 0 Ciss VGS [V] 8 Vcc= 125V 6 4 2 C [nF] Coss 10 -2 Crss 0 0 10 20 30 40 10 -3 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10 10 10 2 tf IF [A] t [ns] td(off) td(on) 1 10 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3611-01MR Transient Thermal Impedance Zth(ch-c)=f(t):D=0 FUJI POWER MOSFET 10 1 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Maximum Avalanche Current Pulsewidth 10 2 IAV=f(tAV):starting Tch=25C. Vcc=48V Avalanche current IAV [A] 10 1 Single Pulse 10 0 10 -1 10 -2 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 4 |
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